Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes

Microelectronics Journal

Volumn 37, Issue 3, 2006, Pages 190-196

  Cappelluti, F ^a   Bonani, F ^a   Furno, M ^a   Ghione, G ^a   Carta, R ^b   Bellemo, L ^b   Bocchiola, C ^b   Merlin, L ^b  

^a POLITECNICO DI TORINO   (Italy)

^b International Rectifier Corporation Italiana   (Italy)

Author keywords

Platinum; Recovery diodes; Reverse recovery modeling

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PLATINUM; SILICON;

FAST RECOVERY DIODES (FRED); PIN-SCHOTTKY STRUCTURES; RECOVERY DIODES; REVERSE RECOVERY MODELING;

SCHOTTKY BARRIER DIODES;

EID: 29244435779     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.09.026     Document Type: Article

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