Controlling porous low-k damage with decoupled plasma etching

Solid State Technology

Volumn 48, Issue 11, 2005, Pages 39-42

  Chen, Lee ^a   Kambara, Hiromitsu ^a,d   Hagihara, Masaaki ^b,e   Koshiishi, Akira ^c  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b Tokyo Electron Mossachusetts LLC   (United States)

^c TOKYO ELECTRON LTD   (Japan)

^d TEA ^*

^e Tokyo Electron Massachusetts LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH STOP LAYER (ESL); ION ENERGY; MECHANICAL DAMAGE; OXIDATION CHEMISTRY;

DIELECTRIC MATERIALS; IONS; OXIDATION; PLASMA APPLICATIONS; PLASMA ETCHING;

POROUS MATERIALS;

EID: 29144535796     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (11)

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