High-luminance EL devices using Zn2Si1-XGe XO4:Mn thin films prepared by combinatorial deposition by r.f. Magnetron sputtering with subdivided powder targets

IEICE Transactions on Electronics

Volumn E88-C, Issue 11, 2005, Pages 2065-2069

  Miyata, Toshihiro ^a,b   Mochizuki, Yu ^a   Minami, Tadatsugu ^a,b  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^b Kyoto Institute of Technology   (Japan)

Author keywords

Combinatorial deposition; Electroluminescence; Magnetron sputtering; Phosphor; Subdivided powder targets; Thin film

Indexed keywords

DEPOSITION; MAGNETRON SPUTTERING; PHOSPHORS; PHOTOLUMINESCENCE; THIN FILMS;

COMBINATORIAL DEPOSITION; PHOTOLUMINESCENT EMISSIONS; SUBDIVIDED POWDER TARGETS; THIN-FILM PHOSPHORS;

LUMINESCENCE;

EID: 29144497997     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.11.2065     Document Type: Article

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