Phonon-induced breakdown of negative bend resistance in an asymmetric SiSiGe cross junction

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Wieser, U ^a   Poenariu, S A ^a,c   Kunze, U ^a   Hackbarth, T ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b DAIMLER AG   (Germany)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; HETEROJUNCTIONS; NANOTECHNOLOGY; PHONONS; SEMICONDUCTING SILICON; VOLTAGE CONTROL;

BEND RESISTANCES; CURRENT-VOLTAGE CHARACTERISTICS; DIFFERENTIAL CONDUCTANCES; HOT ELECTRONS;

ELECTRIC BREAKDOWN;

EID: 29144469390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150268     Document Type: Article

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