Development of ASICs for CdTe pixel and line sensors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 5 III, 2005, Pages 2023-2029

  Tamura, Ken Ichi ^a,b   Hiruta, Tatsuro ^a,b   Ikeda, Hirokazu ^c   Inoue, Hokuto ^a,b   Kiyuna, Tatsuya ^d   Kobayashi, Yoshihito ^a,b,d   Nakazawa, Kazuhiro ^a   Takashima, Takeshi ^a   Takahashi, Tadayuki ^a,b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d Acrorad Co Ltd   (Japan)

Author keywords

ASIC; CdTe; Gamma ray; X ray

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; GAMMA RAYS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING CADMIUM TELLURIDE; X RAYS;

CDTE; ENERGY RESOLUTION;

SENSORS;

EID: 29144461600     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.856872     Document Type: Article

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