Reliability of 4Mbit MRAM

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 163-167

  Åkerman, Johan ^a   Brown, Philip ^a   Gajewski, Don ^a   Griswold, Mark ^a   Janesky, Jason ^a   Martin, Matthew ^a   Mekonnen, Hamere ^a   Nahas, Joseph J ^a   Pietambaram, Srinivas ^a   Slaughter, J M ^a   Tehrani, Saied ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744453883     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. S. Tehrani, J. M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, "Process and Outlook for MRAM Technology," IEEE Trans. Mags., vol. 35, pp. 2814-2819, 2000.
2. B. N. Engel, N. D. Rizzo, J. Janesky, J. M. Slaughter, R. Dave, M. DeHerrera, M. Durlam, and S. Tehrani, "The Science and Technology of Magnetoresistive Tunneling Memory," IEEE Trans. On Nanotechnology, vol. 1, no. 1, pp. 32-38, Mar. 2002.
3. S. Tehrani, J.M. Slaughter, M. DeHerrera, B.N. Engel, N.D. Rizzo, J. Salter, M. Durlam, R.W. Dave, J. Janesky, and G. Grynkewich, "Magnetoresistive Random Access Memory using Magnetic Tunnel Junctions," Proceedings of the IEEE, 91(5), 703, (2003).
4. For a recent review on MRAM and the fundamentals of Magnetoelectronics see "Magnetoelectronics", Edited by Mark Johnson, Elsevier, London, UK, 2004
5. J. Åkerman, P. Brown, M. DeHerrera, M. Durlam, E. Fuchs, D. Gajewski, M. Griswold, J. Janesky, J. J. Nahas, S. Tehrani, "Demonstrated Reliability of 4-Mb MRAM", IEEE Trans. Dev. Mat. Rel. 4, pp. 428-435, 2004
6. T. Miyazaki and N. Tezuka, "Giant magnetic tunneling effect in Fe/Al203/Fe junction," J. Magn. Magn. Mater., 139, pp. L231, (1995).
7. J.S. Moodera, L.R. Kinder, T.M. Wong, and R. Meservey, "Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions," Phys. Rev, Lett., 74, pp. 3273, (1995).
8. P. K. Naji, M. Durlam, S. Tehrani, J. Calder, M. F. DeHerrera, "A 256 kb 3.0 V 1T1MTJ nonvolatile magnetoresistive RAM," IEEE ISSCC Dig. Of Tech. Papers vol. 44 pp. 122-123, Feb. 2001.
9. M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, and S. Tehrani, "A Low Power IMbit MRAM Based on 1T1MTJ Bit Cell Integrated with Copper Interconnects," 2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161, 2002.
10. W. Oepts, H. J. Verhagen, W. J. M. de Jonge, and R. Coehoorn, "Dielectric breakdown of ferromagnetic tunnel junctions," J. Appl. Phys. 73, pp. 2363-2365, 1998
11. S. V. Pietambaram, J. Janesky, R. W. Dave, J. J. Sun, G. Steiner, and J. M. Slaughter, IEEE Trans. Mag. Vol.40, pp.2619-2621, 2004
12. D. J. Keavney, S. Park, C. M. Falco, and J. M. Slaughter, "Thermal stability of magnetic tunnel junctions studied by x-ray photoelectron spectroscopy," Appl. Phys. Lett., vol. 78, pp. 234-236, 2001.