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Chinese Physics Letters

Volumn 22, Issue 12, 2005, Pages 3077-3079

High temperature operation of 5.5 μm strain-compensated quantum cascaded lasers

(5) Lu, Xiu Zhen a Liu, Feng Qi a Liu, Jun Qi a Jin, Peng a Wang, Zhan Guo a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DISPLAY DEVICES; HIGH TEMPERATURE OPERATIONS; INDIUM PHOSPHIDE; MOLECULAR BEAM EPITAXY; QUANTUM CASCADE LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

CLADDING LAYER; CONTINUOUS-WAVE OPERATIONS; DUTY-CYCLE; HIGH-TEMPERATURE OPERATION; OPTICAL POWER; OUTPUT POWER; PULSE OPERATION; QUANTUM-CASCADED LASERS; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAIN-COMPENSATED;

III-V SEMICONDUCTORS;

EID: 28744435834 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/22/12/026 Document Type: Article

Times cited : (7)

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