Effect of sintering time on electrical characteristics and DC accelerated aging behaviors of Zn-Pr-Co-Cr-Dy oxide-based varistors

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 11-12, 2005, Pages 725-732

  Nahm, Choon Woo ^a   Shin, Byoung Chul ^a  

^a Dong Eui University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SINTERING; STABILITY; VARISTORS; ZINC OXIDE;

DC ACCELERATED AGING BEHAVIORS; OXIDE-BASED VARISTORS; SINTERING TIME; STABILITY TEST; ZINC-PRASEODYMIUM-COBALT-CHROMIUM-DYSPROSIUM VARISTORS;

CERAMIC MATERIALS;

EID: 28444474581     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-005-4975-4     Document Type: Article

References (20)

1. L. M. LEVINSON and H. R. PILIPP, Amer. Ceram. Soc. Bull. 65 (1986) 639. 1:CAS:528:DyaL28XhvFOksrg%3D
2. T. K. GUPTA, J. Amer. Ceram. Soc. 73 (1990) 1817. 10.1111/j.1151-2916.1990.tb05232.x
3. Y. S. LEE and T. Y. TSENG, ibid. 75 (1992) 1636. 1:CAS:528:DyaK38XkslCrs7g%3D
4. K. MUKAE, Am. Ceram. Soc. Bull. 66 (1987) 1329. 1:CAS:528:DyaL2sXmt1Krs7c%3D
5. A. B. ALLES and V. L. BURDICK, J. Appl. Phys. 70 (1991) 6883. 10.1063/1.349812
6. Y. -S. LEE, K. -S. LIAO and T. -Y. TSENG, J. Amer. Ceram. Soc. 79 (1996) 2379. 1:CAS:528:DyaK28XlvV2jtrs%3D
7. S. -Y. CHUN, K. SHNOZAKI, and N. MIZUTANI, ibid. 82 (1999) 3065. 1:CAS:528:DyaK1MXotFyjsrY%3D
8. C. -W. NAHM, Mater. Lett. 47 (2001) 182. 10.1016/S0167-577X(00)00262-7
9. C. -W. NAHM and B. -C. SHIN, J. Mater. Sci.: Mater. Electron. 13 (2002) 111. 10.1023/A:1013610408895
10. C. -W. NAHM, J. Mater. Sci. Lett. 21 (2002) 201. 10.1023/A:1014752523252
11. Idem., J. Europ. Ceram. Soc. 23 (2003) 1345. 10.1016/S0955-2219(02)00285-6
12. Idem., Mater. Lett. 47 (2003) 1544.
13. Idem., ibid. 57 (2003) 1317. 1:CAS:528:DC%2BD3sXjtleruw%3D%3D
14. Idem., ibid. 57 (2003) 1322. 1:CAS:528:DC%2BD3sXjtleqsg%3D%3D
15. Idem., ibid. 58 (2004) 849. 1:CAS:528:DC%2BD2cXislWlug%3D%3D
16. J. C. WURST and J. A. NELSON, J. Am. Ceram. Soc. 55 (1972) 109. 1:CAS:528:DyaE38XhtFOjurw%3D
17. M. MUKAE, K. TSUDA and I. NAGASAWA, J. Appl. Phys. 50 (1979) 4475. 10.1063/1.326411
18. L. HOZER, "Semiconductor Ceramics: Grain Boundary Effects, Ellis Horwood," 1994, p. 22
19. J. FAN and R. FREER, J. Amer. Cearm. Soc. 77 (1994) 2663. 1:CAS:528:DyaK2MXisVGksbw%3D
20. T. K. GUPTA and W. G. CALSON, J. Mat. Sci. 20 (1985) 3487. 1:CAS:528:DyaL2MXmt1Ghu7o%3D