Optical investigation of quality improvement of 3C-SiC films after sacrificial oxidation process

Materials Science and Technology

Volumn 12, Issue 1, 1996, Pages 108-111

  Arnaud, G ^a   Alsina, F ^a   Pascual, J ^a   Dezauzier, C ^b   Camassel, J ^b   Becourt N ^c   Di Ciocco, L ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIV MONTPELLIER   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2842595792     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/mst.1996.12.1.108     Document Type: Article

References (5)

1. J. STOEMENOS: personal communication, Aristotle University, Thessaloniki, Greece, 1994.
2. W. J. CHOYKE, Z. C. FENG, and J. A. POWELL: J. Appl. Phys., 1988, 64, 3136.
3. Z. C. FENG, J. MASCHARENAS, W. J. CHOYKE, and J A. POWELL: J. Appl. Phys., 1988, 64, 3176.
4. D. OLEGO, M. CARDONA, and P. VOGL: Phys Rev. B, Condens. Matter, 1982, 25, 3878.
5. D. W. FELDMAN, J. H. PARKER, W. J. CHOYKE, and L. PATRICK: Phys. Rev., 1968, 173, 787.