A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si: H

Chinese Science Bulletin

Volumn 41, Issue 13, 1996, Pages 1079-1083

  Wu, Wei ^a   Huang, Xinfan ^a   Li, Zhifeng ^a   Chen, Kunji ^a   Chen, Xiaoyuan ^a   Liu, Zhiguo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Crystallization; Excimer laser; Nano size Si

Indexed keywords

EID: 2842563935     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Canham, L. T., Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett., 1990, 57: 1046.
2. Chen, K. J., Huang, X. F., Xu, J. et al., Visible photoluminescence in crystallized amorphous Si: H/SiNx: H multiquantum-well structures, Appl. Phys. Lett., 1992, 61: 2069.
3. Fritzsche, H., Hydrogen content and density of plasma-deposited amorphous silicon-hydrogen, J. Appl. Phys., 1979, 50: 3366.
4. Brotherton, S. D., Excimer-laser-annealed poly-Si thin-film-transistors, IEEE, Trans. on ED, 1993, 40: 407.
5. Cheng, G. X., Xia, H., Chen, K. J., Raman measurement of grain size for the crystallite silicon, Phys. Stat. Sol., 1990, 118: k51.
6. James, S., Kim, H. J., Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films, Appl. Phys. Lett., 1993, 63: 1969.