Ring structure in the interfacial region of nanocrystalline silicon films

Chinese Science Bulletin

Volumn 41, Issue 13, 1996, Pages 1139-1142

  Han, Weiqiang ^a   Han, Gaorong ^b   Ding, Zishang ^b   Wei, Saizhen ^c   Mao, Zhusui ^c   Zhang, Jianhua ^c  

^a TSINGHUA UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

HREM; Interfaces of nanocrystalline silicon films; STM

Indexed keywords

EID: 2842541723     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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3. Otobe, M., Oda, S., The role of hydrogen radicals in nucleation and growth of nanocrystalline silicon, J. Non-cryst. Solids, 1993, 164-166:993.
4. He, Y., Liu, X., Wang, Z. et al., The study of nanocrystalline silicon, Science in China, Ser. A, 1992, 35(9):995.
5. Han, W., Han, G., Qiao, J. et al., Structure nature of nanocrystalline silicon, Mat. Res. Soc. Symp. Proc., 1993, 297:381.
6. Wang, Z., Dai, C., Zhang, P. et al., STM study of nanocrystalline silicon films, Chinese Science Bulletin, 1993, 38 (21):1953.
7. He, Y., Zhu, Y., Wang, Z. et al., The characteristics of interfaces morphology of nanocrystalline silicon films, Chin. J. Semi. (in Chinese), 1994, 15(1):71.
8. Ming, N., Sunagawa, I., Tsukamoto, K., The stacking fault growth mechanism and its kinetics, Acta. Phys. Sinica, 1988, 37(5):789.