Raman spectroscopy of doping sheets and heterointerfaces in III-V semiconductor structures

Journal of Raman Spectroscopy

Volumn 27, Issue 3-4, 1996, Pages 231-237

  Wagner, J ^a   Schmitz, J ^a   Newman, R C ^b   Roberts, C ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANTIMONY COMPOUNDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; MONOLAYERS; NARROW BAND GAP SEMICONDUCTORS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SILICON;

HETERO-INTERFACES; III/V SEMICONDUCTORS; INAS/GASB; INTERFACE BONDS; INTERFACE MODE; MECHANICAL INTERFACE; MONOLAYER COVERAGE; SEMICONDUCTOR STRUCTURE; SINGLE LAYER; VIBRATIONAL MODES;

GALLIUM ARSENIDE;

EID: 2842524856     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1097-4555(199603)27:3/4<231::aid-jrs958>3.0.co;2-w     Document Type: Article

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