Stress induced degradation of 90nm node interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 623-624

  Federspiel, X ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

THERMAL EXPANSION;

90NM NODE; EXPERIMENTAL INVESTIGATIONS; PREDICTIVE MODELING; SILICON SUBSTRATES; STRESS-INDUCED; STRESS-INDUCED DEGRADATION; STRESS-INDUCED VOIDING; THERMAL EXPANSION MISMATCH;

ISOTHERMAL ANNEALING;

EID: 28244500109     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315420     Document Type: Conference Paper

References (4)

1. Oshima T., et al, " Suppression of stress induced voiding in copper interconnects", IEEE IITC, 2002.
2. Ogawa E.T., McPherson J.W., Rosal J.A., Dickerson K.J., Chiu T.C., Tsung L.Y., Jain M.K., Bonnifield T.D., Ondrusek J.C, IEEE 40th IRPS, Dallas, Texas, 2002.
3. Roussel C, Kordic S., Sicardy O., Ignat M., Dumas L., Orain S, Barbe J.C, Adv. Met. Conf., 2002.
4. Jawarami D., Gall M., Capasso C, Clark G., Hernandez R., Kawasaki H., "diffusional void growth in dual-inlaid Cu interconnects, Electrochemical society, 1999.