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Volumn 41, Issue 23, 2005, Pages 17-18

Nano-power subthreshold current-mode logic in sub-100 nm technologies

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC INVERTERS; FORMAL LOGIC; GATES (TRANSISTOR); MOS DEVICES; NANOTECHNOLOGY;

EID: 28244448589     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20053082     Document Type: Article
Times cited : (15)

References (7)
  • 1
    • 0032592096 scopus 로고    scopus 로고
    • Design challenges of technology scaling
    • Borkar, S.: ' Design challenges of technology scaling ', IEEE Micro, 1999, 19, (4), p. 23-29
    • (1999) IEEE Micro , vol.19 , Issue.4 , pp. 23-29
    • Borkar, S.1
  • 3
    • 0030350524 scopus 로고    scopus 로고
    • Current-mode differential logic circuits for low power digital systems
    • Martin, M.N.: et al. ' Current-mode differential logic circuits for low power digital systems ', IEEE 39th Midwest Symp. on Circuits and Systems, August 1996, 1, p. 183-186
    • (1996) IEEE 39th Midwest Symp. on Circuits and Systems , vol.1 , pp. 183-186
    • Martin, M.N.1
  • 4
    • 0033645215 scopus 로고    scopus 로고
    • MOS current mode logic for low power, low noise CORDIC computation in mixed-signal environments
    • Musicer, J.M., and Rabaey, J.: ' MOS current mode logic for low power, low noise CORDIC computation in mixed-signal environments ', Proc. of Int. Symp. on Low Power Electronics and Design, 2000, p. 102-107
    • (2000) Proc. of Int. Symp. on Low Power Electronics and Design , pp. 102-107
    • Musicer, J.M.1    Rabaey, J.2
  • 5
    • 0018455052 scopus 로고
    • VLSI limitations from drain-induced barrier lowering
    • Troutman, R.R.: ' VLSI limitations from drain-induced barrier lowering ', IEEE Trans. Electron Devices, 1979, 26, (4), p. 461-469
    • (1979) IEEE Trans. Electron Devices , vol.26 , Issue.4 , pp. 461-469
    • Troutman, R.R.1
  • 6
    • 0023401686 scopus 로고
    • BSIM: Berkeley short-channel IGFET model for MOS transistors
    • Sheu, B.J.: et al. ' BSIM: Berkeley short-channel IGFET model for MOS transistors ', IEEE J. Solid-State Circuits, 1987, 22, (4), p. 558-566
    • (1987) IEEE J. Solid-State Circuits , vol.22 , Issue.4 , pp. 558-566
    • Sheu, B.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.