A 32GHz quadrature LC-VCO in 0.25μm SiGe BiCMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages

  Chan, W L ^a   Veenstra, H ^b   Long, J R ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28144465544     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Hackl et al., "A28-GHz Monolithic Integrated Quadrature Oscillator in SiGe Bipolar Technology," IEEE J. Solid-State Circuits, vol. 38, no. 1, pp. 135-137, Jan., 2003.
2. max=70/ 100GHz 0.25μm Low Power SiGe-BiCMOS Production Technology with High Quality Passives for 12.5Gb/s Optical Networking and Emerging Wireless Applications up to 20GHz," BCTM Proc., pp. 201-204, 2002.
3. max SiGe Technology," ISSCC Dig. Tech. Papers, pp. 394-395, Feb., 2004.
4. A. Hajimiri and T. Lee, "A General Theory of Phase Noise in Electrical Oscillators," IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179-194, Feb., 1998.