Influence of the sidewall diffusion barrier on the transport properties of advanced Cu/low-k interconnects

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 374-379

  Guedj, Cyril ^a   Guillaumond, Jean Frédéric ^a,b   Arnaud, Lucile ^a   Arnal, Vincent ^b   Aimadeddine, Mohamed ^b   Reimbold, Gilles ^a   Torres, Joaquin ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Barrier; Conduction; Cu; Hopping; Interconnect; Leakage; Poole Frenkel; Porous low k; Reliability; TaN; TiN; Transport; ULK

Indexed keywords

DIELECTRIC PROPERTIES; DIFFUSION; FERMI LEVEL; LEAKAGE CURRENTS; RELIABILITY; TANTALUM COMPOUNDS; TITANIUM NITRIDE; TRANSPORT PROPERTIES;

BARRIER; CONDUCTION; HOPPING; INTERCONNECT; POOLE-FRANKEL; POROUS LOW-K; TAN; TRANSPORT; ULK;

COPPER;

EID: 28044470293     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.019     Document Type: Conference Paper

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