Potential of air gap technology by selective ozone/TEOS deposition: Effects of air gap geometry on the dielectric constant

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 362-367

  Stich, A ^a   Gabric, Z ^a   Pamler, W ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Air gap; Capacitance; Ozone; Simulation; TEOS

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DEPOSITION; METALLIZING; PERMITTIVITY;

AIR GAP; TEOS; ULK;

OZONE;

EID: 28044469530     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.017     Document Type: Conference Paper

References (6)

1. B. Shieh IEEE Elect. Dev. Lett. 19 1998 16
2. V. Arnal Proceedings of AMC 2001 2001 Materials Research Society p.71
3. L.G. Gosset et al., in: Proceedings of the IITC 2003.
4. W. Pamler, and Z. Gabric The Electrochem. Society Proceedings 2001-7 2001 227
5. Available from: http://www.ansoft.com.
6. International Techology Roadmap for Semiconductors, 2004 Update (Available from: ).