메뉴 건너뛰기




Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 548-553

Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passives

Author keywords

Characterization; Coplanar wave guide; Dielectrics; High frequency; High k; K value

Indexed keywords

CHARACTERIZATION; COPPER; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; ELECTRIC INSULATORS; ELECTRIC LINES; PERMITTIVITY; WAVEGUIDES;

EID: 28044469040     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.054     Document Type: Conference Paper
Times cited : (4)

References (7)
  • 1
    • 28044448996 scopus 로고    scopus 로고
    • Al - Advanced CMOS transistors with a novel HfSiON gate dielectric
    • Honolulu
    • A. Rotondaro, Al - Advanced CMOS Transistors with a Novel HfSiON Gate Dielectric, in: Technology Symposium on VLSI 2002, Honolulu, 2002.
    • (2002) Technology Symposium on VLSI 2002
    • Rotondaro, A.1
  • 5
    • 28044450699 scopus 로고
    • Development of automatic networks analyzer calibration methods
    • Oxford University Press Oxford
    • B. Schieck Development of automatic networks analyzer calibration methods Review of Radio Science 1995/1996 Oxford University Press Oxford
    • (1995) Review of Radio Science
    • Schieck, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.