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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 241, Issue 1-4, 2005, Pages 326-330

Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb

(7) Corregidor, V a Barradas, N P a,b Alves, E a,b Franco, N a Alves, L C a Chaves, P C a Reis, M A a

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

IBA characterization; Metalorganic vapour phase epitaxy; Semiconducting III V materials; Thermophotovoltaics cells

Indexed keywords

GROWTH KINETICS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOVOLTAIC CELLS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; X RAYS;

CRYSTAL COMPOSITION; IBA CHARACTERIZATION; SEMICONDUCTOR III-IV MATERIALS; THERMOPHOTOVOLTAICS CELLS;

ION BEAMS;

EID: 28044466191 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/j.nimb.2005.07.037 Document Type: Conference Paper

Times cited : (8)

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