Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 108-111

  Neo, W C E ^a   Liu, X ^a   Lin, Y ^a   De Vreede, L C N ^a   Larson, L E ^b   Spirito, M ^a   Akhnoukh, A ^a   De Graauw, A ^c   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; POWER AMPLIFIERS; POWER CONTROL;

HANDSET DEVICE; POWER AMPLIFIER EFFICIENCY;

SILICON COMPOUNDS;

EID: 27944499431     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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9. K. Buisman et al, "Low-Distortion, Low-Loss Varactor-based Adaptive Matching Networks, Implemented in a Silicon-on-Glass Technology," To be published in RFIC 2005
10. S. Cripps, RF Power Amplifier for Wireless Communication. Boston, MA: Artech House, 1999.
11. http://www.semiconductors.philips.com/
12. F.H. Raab, "High-efficiency linear amplification by dynamic load modulation," 2003 IEEE MTT-S International Microwave Symposium Digest, Vol.3, pp. 1717-1720, June 2003.