Effect of maximum Cu ratio during three-stage CIGS growth documented by design of experiment

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 311-314

  Repins, I L ^a   Fisher, D C ^a   Beck, M E ^b   Britt, J S ^b  

^a ITN ENERGY SYSTEMS INC   (United States)

^b Global Solar Energy Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; FILM THICKNESS;

COPPER; EVAPORATION; THIN FILMS;

SEMICONDUCTOR GROWTH;

EID: 27944482639     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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