The piezo-ressstive effect in silicon for arbitrary crystal orientation

Proceedings of IEEE Sensors

Volumn 3, Issue , 2004, Pages 1121-1124

  Udo, Ausserlechner ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

L layout; Mechanical stress on integrated resistors; Package drift; Piezo MOS effect; Piezo resistance; Resistor L

Indexed keywords

CRYSTAL ORIENTATION; MOS DEVICES; PIEZOELECTRIC DEVICES; STRENGTH OF MATERIALS;

CURRENT FLOW; INTEGRATED RESISTORS; WAFER ORIENTATION;

SILICON;

EID: 27944477820     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Yozo Kanda, "A Graphical Representation of the Piezoresistive Coefficients in Silicon", IEEE Tran. Electron. Devices, vol. ED-29, no. 1, pp. 64-70, Jan. 1982.
2. Yozo Kanda, "Graphical Representation of the Piezoresistance Coefficients in Silicon-Shear Coefficients in Plane", Jap. J. Appl. Phys., vol. 26, no. 7, pp. 1031-1033, July 1987.
3. J. F. Nye, Physical Properties of Crystals, 1985 ed., Oxford Science Publications, Clarendon Press, Oxford, chapter VIII, par. 5: "Representation surfaces and Young's Modulus"
4. B. Hälg, "Piezo-Hall coefficients for n-type silicon", J. Appl. Phys., vol. 64, pp. 276-282, 1988.
5. Richard C. Jaeger et. al., "CMOS Stress Sensors on (100) Silicon", IEEE JSSC, vol. 35, no. 1, pp. 85-95, Jan. 2000.