Study of deep electronic states in CdTe solar cells through the detection and DLTS treatment of slow transients

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 275-278

  Seymour, Fred H ^a   Kaydanov, Victor ^a   Ohno, Tim R ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMATED DATA ACQUISITION SOFTWARE; CAPACITANCE RESISTANCE (CTR); DEEP ELECTRONIC STATES (DES); MEYER-NELDEL RULE;

CAPACITANCE; COMPUTER SOFTWARE; DATA ACQUISITION; SEMICONDUCTOR DOPING; TEMPERATURE CONTROL;

SOLAR CELLS;

EID: 27944476473     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. D.L. Losee, "Admittance spectroscopy of impurity levels in Schottky barriers", J Appl. Phys. 46, 1975, pp. 2204-2212.
2. D.V. Lang, "Deep-Level transient spectroscopy: A new method to characterize traps in semiconductors", J Appl. Phys. 45, 1974 pp 3023-3032
3. R. Chen, "Apparent stretched-exponential luminescence decay in crystalline solids", Journal of Luminescence 102-103, 2003 pp 510-518
4. P. Blood and J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Acad. Press Ltd, 1992, London
5. A.S. Gilmore et al, "Treatment effects on deep levels in CdTe solar cells", IEEE PVSC, 2002
6. S.W. Johnston and R.S. Crandall, "Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaics Materials", MRS Proceedings Symposium B, 763, 2003
7. R. Widenhorn, A. Rest, E. Bodegom, "The Meyer-Neldel rule for a property determined by two transport mechanisms", J. Appl. Phys., 91, 2002, pp 6524-6528