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Volumn , Issue , 2005, Pages 529-534

Variations-aware low-power design with voltage scaling

Author keywords

Low Voltage; Parallel Systems; Process Variations

Indexed keywords

ELECTRIC POTENTIAL; PROCESS CONTROL;

EID: 27944461412     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/dac.2005.193866     Document Type: Conference Paper
Times cited : (20)

References (11)
  • 1
    • 2442667604 scopus 로고    scopus 로고
    • A scalable X86 CPU design for 90nm process
    • J. Schutz and C. Webb. A scalable X86 CPU design for 90nm process. ISSCC, 2004.
    • (2004) ISSCC
    • Schutz, J.1    Webb, C.2
  • 3
    • 0027256982 scopus 로고
    • Trading speed for low power by choice of supply and threshold voltages
    • January
    • D. Liu and C. Svensson. Trading speed for low power by choice of supply and threshold voltages. IEEE Journal of Solid-State Circuits, 28(1):10-17, January 1993.
    • (1993) IEEE Journal of Solid-state Circuits , vol.28 , Issue.1 , pp. 10-17
    • Liu, D.1    Svensson, C.2
  • 4
    • 0742286681 scopus 로고    scopus 로고
    • Ultra-low-power DLMS adaptive filter for hearing aid applications
    • December
    • C. Kim, H. Soeleman, and K. Roy. Ultra-low-power DLMS adaptive filter for hearing aid applications. IEEE Transactions on VLSI, 11(6):1058-1067, December 2003.
    • (2003) IEEE Transactions on VLSI , vol.11 , Issue.6 , pp. 1058-1067
    • Kim, C.1    Soeleman, H.2    Roy, K.3
  • 5
    • 0031342511 scopus 로고    scopus 로고
    • The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits
    • December
    • M. Eisele, et al. The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits. IEEE Transactions on VLSI, 5(4):360-368, December 1997.
    • (1997) IEEE Transactions on VLSI , vol.5 , Issue.4 , pp. 360-368
    • Eisele, M.1
  • 6
    • 0005439143 scopus 로고    scopus 로고
    • Models of process variations in device and interconnect
    • A. Chandrakasan, W. J. Bowhill, and F. Fox, editors, IEEE Press, New York, NY
    • D. Boning and S. Nassif. Models of process variations in device and interconnect. In A. Chandrakasan, W. J. Bowhill, and F. Fox, editors, Design of High-Performance Microprocessor Circuits. IEEE Press, New York, NY, 2001.
    • (2001) Design of High-performance Microprocessor Circuits
    • Boning, D.1    Nassif, S.2
  • 7
    • 84861284326 scopus 로고    scopus 로고
    • http://www-device.eecs.berkeley.edu/~ptm/.
  • 8
    • 0042196141 scopus 로고    scopus 로고
    • Simultaneous subthreshold and gate-oxide tunneling leakage current analysis in nanometer CMOS design
    • D. Lee, W. Kwong, D. Blaauw, and D. Sylvester. Simultaneous subthreshold and gate-oxide tunneling leakage current analysis in nanometer CMOS design. ISQED, pages 287-292, 2003.
    • (2003) ISQED , pp. 287-292
    • Lee, D.1    Kwong, W.2    Blaauw, D.3    Sylvester, D.4
  • 9
    • 0033882265 scopus 로고    scopus 로고
    • Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
    • February
    • W.K. Henson et al. Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime. IEEE Transactions on Electron Devices, 47(2):440-447, February 2000.
    • (2000) IEEE Transactions on Electron Devices , vol.47 , Issue.2 , pp. 440-447
    • Henson, W.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.