Correlation between modeled and experimental device performance results for CIGS solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 351-354

  Jensen, D G ^a  

^a ITN ENERGY SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; CAPACITANCE PROFILING; DEVICE EFFICIENCY; STATE DENSITY;

CAPACITANCE; CARRIER CONCENTRATION; CORRELATION METHODS; GALLIUM COMPOUNDS; MATHEMATICAL MODELS;

SOLAR CELLS;

EID: 27944443320     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. I. Repins et. al, "Comparison of Device Performance and Measured Transport Parameters in Widely-Varying Cu(In,Ga)(Se,S) Solar Cells", submitted for publication to Progress in Photovoltaics in November, 2004.
2. Analysis of Microelectronic and Photonic Structures, v. BETA 1.00, S. Fonash et al., 1997, Pennsylvania State University.
3. J.L. Gray, "ADEPT: A General Purpose Numerical Device Simulator for Modeling Solar Cells in One-,Two-, and Three-Dimensions", Twenty Second IEEE PVSC, 1991, pp. 436-438.
4. M. Gloeckler, A.L. Fahrenbruch, and J.R. Sites, "Numerical Modeling of CIGS and CdTe Solar Cells: Setting the Baseline", Proceedings of the 3rd World Conference on Photovoltaic Energy, 2003, p. 2P-D52.
5. 2 alloy thin films by spectroscopy ellipsometry", J. Appl. Phys. 94, 2003, pp. 879-888.
6. 2 compounds", J. Appl. Phys. 83, 1998, pp. 3192-3196.