Analytic model for ion channeling in successive implantations in crystalline silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 376-378

  Strauss, S ^a   Zechner, C ^a   Terterian, A ^a   Gautschi, R ^a   Erlebach, A ^a   Scholze, A ^b  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b SYNOPSYS INC   (United States)

Author keywords

Analytical implantation; Crystalline silicon; Ion channeling; Monte Carlo; Successive ion implantations; TCAD

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; CRYSTALS; FUNCTIONS; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SIMULATORS;

ANALYTICAL IMPLANTATION; CRYSTALLINE SILICON; ION CHANNELING; MONTE CARLO; SUCCESSIVE ION IMPLANTATIONS; TCAD;

SILICON;

EID: 27844582881     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.019     Document Type: Conference Paper

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