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Volumn 2, Issue , 2004, Pages 315-318

I-V reverse characteristic instability of high voltage silicon PN junctions at high temperature

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR DIODES; STABILITY; VOLTAGE CONTROL;

EID: 27844550207     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (5)
  • 1
    • 3843106109 scopus 로고    scopus 로고
    • Electrical characteristics of present-day manufactured power semiconductor PN junctions and the I-V characteristic theory
    • Sinaia, Romania
    • V.V.N.Obreja, K.I.Nuttall, O.Buiu,"Electrical characteristics of present-day manufactured power semiconductor PN junctions and the I-V characteristic theory", Proc. 26th International Semiconductor Conference(CAS), 2003, Sinaia, Romania, pp.253-256.
    • (2003) Proc. 26th International Semiconductor Conference(CAS) , pp. 253-256
    • Obreja, V.V.N.1    Nuttall, K.I.2    Buiu, O.3
  • 3
    • 3843115556 scopus 로고    scopus 로고
    • Experiments on behaviour of power silicon PN junctions under reverse bias voltage at high temperature
    • May, Brussels.Belgium
    • V.V.N.Obreja, C. Codreanu, K.I. Nuttall, O. Buiu, "Experiments on Behaviour of Power Silicon PN Junctions under Reverse Bias Voltage at High Temperature", in Proc. EuroSIME Conference, May 2004, Brussels.Belgium pp.185-190.
    • (2004) Proc. EuroSIME Conference , pp. 185-190
    • Obreja, V.V.N.1    Codreanu, C.2    Nuttall, K.I.3    Buiu, O.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.