Electrical and infrared-optical investigations of n-doped (Zn,Mn)Se epilayers

AIP Conference Proceedings

Volumn 772, Issue , 2005, Pages 171-172

  Daniel, B ^a   Agarwal, K C ^a   Klingshirn, C ^a   Hetterich, M ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27844527511     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1994048     Document Type: Conference Paper

References (7)

1. Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A., and Molenkamp, L. W., Nature (London), 402, 787-790 (1999).
2. Kvietkova, J., Daniel, B., Hetterich, M., Schubert, M., Spemann, D., Litvinov, D., and Gerthsen, D., Phys. Rev. B, 70, in press (2004).
3. Hetterich, M., Daniel, B., Klingshim, C., Pfundstein, P., Litvinov, D., Gerthsen, D., Eichhorn, K., and Spemann, D., Phys. Status Solidi C, 1 (4), 649-652 (2004).
4. Grün, M., Storzum, A., Hetterich, M., Kamilli, A., Send, W., and Klingshirn, C., J. Crystal Growth, 201/202, 457-460 (1999).
5. Abad, H., Jonker, B. T., Yu, W. Y., Stoltz, S., and Petrou, A., Appl. Phys. Lett., 66, 2412-2414 (1995).
6. Yu, P. Y., and Cardona, M., Fundamentals of Semiconductors, Springer, Berlin, Heidelberg, New York, 1996.
7. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, Vol III/41B, Springer, Berlin, Heidelberg, New York, 1982.