Ab initio calculations of the interaction between native point defects in silicon

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 368-371

  Hobler, G ^a   Kresse, G ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF VIENNA   (Austria)

Author keywords

Ab initio; Interstitial; Point defect interaction; Silicion; Vacancy

Indexed keywords

CALCULATIONS; DEFECTS; ENERGY MANAGEMENT; POINT DEFECTS; SEPARATION;

AB-INITIO; INTERSTITIAL; POINT DEFECT INTERACTION; VACANCY;

SILICON;

EID: 27844464859     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.072     Document Type: Conference Paper

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