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Volumn 494, Issue 1-2, 2006, Pages 69-73

Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

Author keywords

Buffer layer; Energy bandgap; InN; Refractive index; Spectroscopic ellipsometry (SE)

Indexed keywords

CARRIER CONCENTRATION; ELLIPSOMETRY; ENERGY GAP; EPITAXIAL GROWTH; INDIUM COMPOUNDS; LIGHT ABSORPTION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 27844462512     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.177     Document Type: Conference Paper
Times cited : (8)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.