|
Volumn 494, Issue 1-2, 2006, Pages 69-73
|
Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry
|
Author keywords
Buffer layer; Energy bandgap; InN; Refractive index; Spectroscopic ellipsometry (SE)
|
Indexed keywords
CARRIER CONCENTRATION;
ELLIPSOMETRY;
ENERGY GAP;
EPITAXIAL GROWTH;
INDIUM COMPOUNDS;
LIGHT ABSORPTION;
REFRACTIVE INDEX;
SCANNING ELECTRON MICROSCOPY;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
BUFFER LAYERS;
ENERGY BANDGAP;
EPITAXIAL FILMS;
SPECTROSCOPIC ELLIPSOMETRY (SE);
THIN FILMS;
|
EID: 27844462512
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2005.07.177 Document Type: Conference Paper |
Times cited : (8)
|
References (16)
|