Photoluminescence dependence on imposing bias for ZnGa2O 4 and ZnGa2O4 activated with Mn2+ or Cr3+ n-type semiconductor electrodes

Electrochemistry Communications

Volumn 7, Issue 12, 2005, Pages 1389-1392

  Ohtake, Toshihito ^a,b   Sonoyama, Noriyuki ^a   Sakata, Tadayoshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Photoluminescence; Semiconductor electrode; Transition rate; ZnGa2O4

Indexed keywords

ELECTRODES; ELECTRONS; ZINC COMPOUNDS;

SEMICONDUCTOR ELECTRODE; TRANSITION RATE; ZNGA2O4;

PHOTOLUMINESCENCE;

EID: 27844453834     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2005.09.024     Document Type: Article

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