Two-dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 335-340

  Alwan, M ^a   Beydoun, B ^b   Ketata, K ^a   Zoaeter, M ^b  

^a UNIVERSITÉ DE ROUEN   (France)

^b LEBANESE UNIVERSITY   (Lebanon)

Author keywords

Breakdown voltage; C V characterization; Ionization coefficient; Thermal stress; VDMOS transistor

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; COMPUTER SIMULATION; DIFFUSION; ELECTRIC BREAKDOWN; IONIZATION; PARAMETER ESTIMATION; SEMICONDUCTOR JUNCTIONS; THERMAL STRESS;

C-V CHARACTERIZATION; IONIZATION COEFFICIENT; JUNCTION THEORY; VDMOS TRANSISTOR;

MOS DEVICES;

EID: 27844440273     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.092     Document Type: Conference Paper

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