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Volumn 3050, Issue , 1997, Pages 602-606
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Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry
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Author keywords
Silicon oxynitride; Spectroscopic ellipsometry; Stoichiometry
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Indexed keywords
CONTROL THEORY;
HYDROGEN;
LIGHT REFRACTION;
NITRIDES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REAL TIME SYSTEMS;
REFRACTIVE INDEX;
REFRACTOMETERS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SPECTROSCOPIC ELLIPSOMETRY;
STOICHIOMETRY;
THIN FILMS;
ANTI-REFLECTIVE FILMS;
ANTI-REFLECTIVE LAYERS;
COMPOSITIONAL CHARACTERISTICS;
COMPOSITIONAL VARIATIONS;
CRITICAL DIMENSION VARIATIONS;
DISPERSION MODELS;
DUV LITHOGRAPHIES;
EXTINCTION COEFFICIENTS (K);
HYDROGEN CONCENTRATIONS;
K VALUES;
PATTERN RESOLUTIONS;
REFLECTIVE PROPERTIES;
REFRACTIVE INDEX DISPERSIONS;
RUTHERFORD BACK-SCATTERING SPECTROMETRIES;
SHORTER WAVELENGTHS;
SILICON OXYNITRIDE;
SINGLE LAYERS;
SION FILMS;
THIN-FILM INTERFERENCES;
ULTRA VIOLETS;
UV REGIONS;
PROCESS CONTROL;
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EID: 27744579646
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.275953 Document Type: Conference Paper |
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Times cited : (1)
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References (2)
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