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Volumn 41, Issue 10, 2005, Pages 1124-1127

Crystal growth and properties of PbI 2 doped with Fe and Ni

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Indexed keywords


EID: 27744531506     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1007/s10789-005-0271-1     Document Type: Article
Times cited : (12)

References (14)
  • 2
    • 0040748089 scopus 로고    scopus 로고
    • State of the Art of Wide-Band Gap Semiconductor Nuclear Radiation Detectors
    • Shieber, M., James, R.B., Lund, J.C., et al., State of the Art of Wide-Band Gap Semiconductor Nuclear Radiation Detectors, Nuovo Cimento Soc. Ital. Fis., A, 1996, vol. 109, no. 9, pp. 1253-1260.
    • (1996) Nuovo Cimento Soc. Ital. Fis., A , vol.109 , Issue.9 , pp. 1253-1260
    • Shieber, M.1    James, R.B.2    Lund, J.C.3
  • 4
  • 12
    • 0344226194 scopus 로고
    • Low-Energy Impurity-Bound Excitons and Edge Absorption in Semiconductors
    • Ermakov, V.N. and Nitsovich, V.V., Low-Energy Impurity-Bound Excitons and Edge Absorption in Semiconductors, Ukr. Fiz. Zh. (Russ. Ed), 1981, vol. 26, no. 3, pp. 411-417.
    • (1981) Ukr. Fiz. Zh. (Russ. Ed) , vol.26 , Issue.3 , pp. 411-417
    • Ermakov, V.N.1    Nitsovich, V.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.