Nonlinear I-V characteristics of nanotransistors in the Landauer-Büttiker formalism

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Nemnes, G A ^a,b   Wulf, U ^c   Racec, P N ^c,d  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF BUCHAREST   (Romania)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^d NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; NANOTRANSITORS; SHORT-CHANNEL EFFECTS; THREE-DIMENSIONAL BALLISTIC MODELS;

BALLISTICS; ELECTRON TUNNELING; NANOTECHNOLOGY;

MOSFET DEVICES;

EID: 27744500226     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2113413     Document Type: Article

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