Lateral silicon field emission devices using electron beam lithography

1999 International Microprocesses and Nanotechnology Conference

Volumn , Issue , 1999, Pages 134-135

  Shin, Hyungcheol ^a   Yang, Sun A ^a   Hwang, Taekeun ^a   Han, Sangyeon ^a   Lee, Jongho ^b   Lee, Jong Duk ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Wonkwang University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FIELD EMISSION; FIELD EMISSION CATHODES; MICROELECTRONICS; NANOTECHNOLOGY; REACTIVE ION ETCHING;

ANODE SPACINGS; FABRICATED DEVICE; FIELD EMISSION DEVICES; FIELD EMISSION DIODE; HIGH RESOLUTION; HIGH-SPEED OPERATION; LOW VOLTAGES; VACUUM MICROELECTRONIC DEVICES;

FIELD EMISSION DISPLAYS;

EID: 27744497451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.1999.797513     Document Type: Conference Paper

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