A comparative study of different contact resistance test structures dedicated to the power process technology

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1617-1622

  Oussalah, Slimane ^a   Djezzar, Boualem ^a   Jerisian, Robert ^b  

^a CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

Contact test structure; Power technology; Specific contact resistance

Indexed keywords

CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); ELECTRIC POWER SYSTEMS; ELECTRIC RESISTANCE; INTEGRATED CIRCUITS; SEMICONDUCTOR METAL BOUNDARIES;

CONTACT TEST STRUCTURES; METAL-SEMICONDUCTOR INTERFACES; POWER TECHNOLOGY; SPECIFIC CONTACT RESISTANCE;

POWER ELECTRONICS;

EID: 27744496444     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.08.004     Document Type: Article

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