Study on stability of hydrogenated amorphous silicon films

Chinese Physics

Volumn 14, Issue 11, 2005, Pages 2348-2351

  Zhu, Xiu Hong ^a   Chen, Guang Hua ^a   Zhang, Wen Li ^a   Ding, Yi ^b   Ma, Zhan Jie ^a   Hu, Yue Hui ^a   He, Bin ^a   Rong, Yan Dong ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Hydrogen elimination (HE) model; Hydrogenated amorphous silicon (a Si:H) films; Microstructure; Photosensitivity; Stability

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; HYDROGEN BONDS; HYDROGENATION; MICROSTRUCTURE; MICROWAVES; PHOTOSENSITIVITY;

HYDROGEN DILUTION; HYDROGEN ELIMINATION (HE) METHOD; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 27744489406     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/11/035     Document Type: Article

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