Osmium impurity-related deep levels in n -type GaAs

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Majid, A ^a   Iqbal, M Zafar ^a   Dadgar, A ^b   Bimberg, D ^b  

^a QUAID I AZAM UNIVERSITY   (Pakistan)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT IMPURITY; ELECTRON CAPTURE; THERMAL ACTIVATION ENERGY; THERMAL EMISSION;

ACTIVATION ENERGY; CRYSTAL DEFECTS; ELECTRIC FIELDS; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSMIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 27744481746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2106010     Document Type: Article

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