Amplification at λ ∼ 2.8 Å on Xe(L)(2s̄2p̄) double-vacancy states produced by 248 nm excitation of Xe clusters in plasma channels

Journal of Physics B: Atomic, Molecular and Optical Physics

Volumn 38, Issue 22, 2005, Pages 3935-3944

  Borisov, Alex B ^a   Song, Xiangyang ^a   Zhang, Ping ^a   Dasgupta, Arati ^d   Davis, Jack ^d   Kepple, Paul C ^d   Dai, Yang ^b   Boyer, Keith ^a   Rhodes, Charles K ^a,b,c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b University of Illinois at Chicago   (United States)

^c University of Illinois at Chicago   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; PLASMA APPLICATIONS; SATURATION (MATERIALS COMPOSITION); X RAYS;

CASCADE TRANSITIONS; DOUBLE-VACANCY STATES; PLASMA CHANNELS; SATURATION MIRRORS;

XENON;

EID: 27744462840     PISSN: 09534075     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-4075/38/22/001     Document Type: Article

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