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Volumn 25, Issue 5-8, 2005, Pages 779-783

Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT DENSITY; DENSITY (OPTICAL); DISLOCATIONS (CRYSTALS); GROUND STATE; LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DOTS-IN-A-WELL (DWELL); INTER-LAYER DOT UNIFORMITY; QUANTUM DOT LASERS; SPACER LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27744456172 PISSN: 09284931 EISSN: None Source Type: Journal
DOI: 10.1016/j.msec.2005.06.006 Document Type: Article

Times cited : (13)

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