All lead free IGBT module with excellent reliability

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 79-82

  Nishimura, Y ^a   Oonishi, K ^a   Morozumi, A ^a   Mochizuki, E ^a   Takahashi, Y ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATION; LEAD; RELIABILITY; SOLDERING; SUBSTRATES; THERMAL CYCLING; THERMAL EXPANSION;

INSULATED SUBSTRATES; LEAD FREE SOLDER; TEMPERATURE CYCLING; THERMAL EXPANSION COEFFICIENTS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27744435139     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. A.Morozumi. et al, "Reliability of Power cycling for IGBT Power Semiconductor Modules." IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS vol.39,no.3,May/June 2003,p665-671
2. th ISPSD, pp.347-350,2004.