A method for the depth profiling of optically active states in ion-implanted silicon

Instruments and Experimental Techniques

Volumn 40, Issue 5, 1997, Pages 693-696

  Aleksandrov, P A ^a   Baranova, E K ^a   Baranova, I V ^a   Budaragin, V V ^a   Litvinov, V L ^a  

^a KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27644585564     PISSN: 00204412     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Aleksandrov, P.A., Baranova, E.K., Gorodetskii, A.E., Demakov, K.D., Kutukova, O.G., and Shemardov, S.G., Fiz. Tekh. Poluprovodn. (Leningrad), 1988, vol. 22, no. 4, p. 731.
2. Johansson, N.G.E., Mayer, J.W., and Marsh, O.J., Solid-State Electron., 1970, vol. 13, no. 3, p. 317.
3. Brodgkii, M.H., Cardona, M., and Ouomo, J.J., Phys. Rev. B: Condens. Matter, 1977, vol. 16, no. 6, p. 3556.
4. Shanks, H., Fang, C.J., Ley, L., Cardona, M., Demond, F.J., and Kalbitzer, S., Phys. Status Solidi B, 1980, vol. 100, no. 11, p. 43.
5. Tauc, J., Optical Properties of Semiconductors in the Visible and Ultra-Violet Ranges, London, 1965.