Effect of thermal treatment conditions on properties of SiO2 films deposited from tetraethoxysilane solutions

Russian Journal of Applied Chemistry

Volumn 72, Issue 10, 1999, Pages 1685-1689

  Kazachenok, E A ^a   Bogomazova, N V ^a   Zharskii, I M ^a  

^a BELARUSIAN STATE TECHNOLOGICAL UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27644531079     PISSN: 10704272     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Rubtsov, N.M., Zarar'in, V.I., and Spektor, V.N., Dielektricheskie materialy v elektronike (Dielectric Materials in Electronics), Moscow: Akad. Nauk SSSR, 1991.
2. Ratnov, A.G., Rubtsov, N.M., Temchin, S.M., et al., Mikroelektronika, 1996, vol. 25, no. 1, pp. 32-40.
3. Prosvetlenie optiki (Antireflection Coatings in Optics), Grebenshchikov, I.V., Ed., Moscow: Gostekhizdat, 1946.
4. Fogel', V.A., Elektron. Tekhn., Poluprovodn. Pribory, 1971, issue 1(58), pp. 87-93.
5. Prikhid'ko, N.E., Borisenko, A.I., Chepik, L.F., et al., Voprosy Radioelektr. Tekhnol. Proizvodstva Oborudovanie, 1970, issue 1, pp. 20-25.