Measurements and finite-element simulations of residual stresses developed in Si3N4/Ni diffusion bonds

Journal of the American Ceramic Society

Volumn 88, Issue 9, 2005, Pages 2515-2520

  Vila, M ^a   Prieto, C ^a   Miranzo, P ^b   Osendi, M I ^b   Del Rio J M ^c   Perez Castellanos J L ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b INSTITUTO DE CERÁMICA Y VIDRIO   (Spain)

^c UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; COMPUTER SIMULATION; DIFFUSION; FINITE ELEMENT METHOD; HIGH TEMPERATURE EFFECTS; LIGHT ABSORPTION; PRESSURE EFFECTS; RESIDUAL STRESSES; SCANNING; STRAIN; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BONDS; FINITE-ELEMENT SIMULATIONS; RESIDUAL STRAIN; X-RAY SCANNING DIFFRACTOMETRY;

SILICON NITRIDE;

EID: 27644440916     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2005.00485.x     Document Type: Article

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