Photoluminescence intermittency of InGaAs/GaAs quantum dots confined in a planar microcavity

Nano Letters

Volumn 5, Issue 10, 2005, Pages 1873-1877

  Wang, X Y ^a   Ma, W Q ^b   Zhang, J Y ^b   Salamo, G J ^b   Xiao, Min ^b   Shih, C K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE INTERMITTENCY; PLANAR MICROCAVITY;

GALLIUM COMPOUNDS; INDIUM COMPOUNDS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS;

PHOTOLUMINESCENCE;

EID: 27544498004     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl051026x     Document Type: Article

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20. 2 used in our experiment.
21. When the laser energy was changed a little from below to above ∼ 1. 53 eV turning a nonblinking QD into a blinking one, no red shifts and intensity changes were observed in the "off" state PL spectrum of the blinking QD and in the PL peaks of all the other nonblinking QDs within the vicinity of this blinking QD. So we can conclude that the excitation threshold of ∼1.53 eV is not caused by the temperature and excitation intensity changes which are known to influence the frequencies of a blinking process.