Atomic layer chemical vapor deposition (ALCVD) of Hf and Zr silicate and aluminate high-k gate dielectric for next generation nano devices

Journal of Chemical Engineering of Japan

Volumn 38, Issue 8, 2005, Pages 578-587

  Kim, Won Kyu ^a   Nam, Won Hee ^a   Kim, Suk Hoon ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Atomic layer deposition (ALD); Hafnium silicate; High k gate dielectric

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; ULTRATHIN FILMS; ZIRCONIUM COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); HAFNIUM SILICATE; HIGH-K GATE DIELECTRICS; ZIRCONIUM ALUMINATE;

NANOTECHNOLOGY;

CHEMICAL ENGINEERING; CHEMICAL VAPOR DEPOSITION;

EID: 27544471766     PISSN: 00219592     EISSN: 00219592     Source Type: Journal    
DOI: 10.1252/jcej.38.578     Document Type: Review

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