Silicon anisotropic wet etching simulation using molecular dynamics

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 1, Issue , 2005, Pages 816-819

  Kakinaga, T ^a   Hatai, A ^a   Tabata, O ^b   Isono, Yoshitada ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DISTANCE; MOLECULAR DYNAMICS SIMULATION; SINGLE CRYSTAL SILICON; WET ETCHING;

ANISOTROPY; COMPUTER SIMULATION; HYDROGEN; MOLECULAR DYNAMICS; OXYGEN; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

ETCHING;

EID: 27544465407     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1496542     Document Type: Conference Paper

References (6)

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3. TH SENSER SYMPOSIUM, 2004. 195-198
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6. Japan Chemical Society, Chemical Handbook, Fundamentals, Section II, (1986), p819, Maruzen (in Japanese)