Observation of B segregation on Si(1 1 3) by scanning tunneling microscopy

Ultramicroscopy

Volumn 105, Issue 1-4, 2005, Pages 16-21

  Zhang, Zhaohui ^a   Sumitomo, Koji ^b   Lin, Feng ^b,c  

^a PEKING UNIVERSITY   (China)

^b Bio Medical Informatics Research Center   (Japan)

^c UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

B segregation; Scanning tunneling microscopy; Si(1 1 3)

Indexed keywords

ANNEALING; BORON; ELECTRONIC STRUCTURE; ION IMPLANTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

B SEGREGATION; SI (1 1 3); SURFACE RECONSTRUCTION;

SEGREGATION (METALLOGRAPHY);

BORON; SILICON;

ATOM; CONFERENCE PAPER; ELECTRON; SAMPLE; SCANNING TUNNELING MICROSCOPY; SEGREGATION ANALYSIS; SURFACE PROPERTY;

EID: 27544437364     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2005.06.012     Document Type: Conference Paper

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