Fully CMOS compatible on-LSI capacitive pressure sensor fabricated using standard back-end-of-line processes

Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Volumn 1, Issue , 2005, Pages 37-40

  Fujimori, T ^a   Hanaoka, Y ^a   Fujisaki, K ^a   Yokoyama, N ^a   Fukuda, H ^a  

^a HITACHI LTD   (Japan)

Author keywords

CMOS; Pressure sensor; Process integration

Indexed keywords

AMORPHOUS LAYERS; BACK-END OF LINE (BEOL) PROCESSES; PRESSURE SENSORS; PROCESS INTEGRATION;

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; DIGITAL CIRCUITS; ELECTRODES; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; RELIABILITY;

PARTIAL PRESSURE SENSORS;

EID: 27544432680     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1496353     Document Type: Conference Paper

References (3)

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